产品分类/ Products
- NS2583 同步升压型 2A 双节锂电池充电管理 IC
- NLC47022带NTC功能和电量均衡功能电流2A 5V异
- PT2027 单触控双输出 LED 调光 IC
- HT316C兼容HT326C防破音功能免电感滤波2×20WD
- HT3386兼容TPA3118 2×50W D类立体声音频功放
- NS8220 300mW 双声道耳机音频放大器
- HT6875 2.8W防削顶单声道D类音频功率放大器
- HT77221 HT77211 4.0V~30V输入，2A/1.2A同步降压变换器
- NS4117X 系列 外置 MOS 管开关降压型 LED 恒流控制器
- HT71663 13V,12A全集成同步升压转换器
- HT71763 20V,15A全集成同步升压转换器
- NS2160 同步开关型降压锂电池充电管理 IC
- HT7702 2.5~5.5V输入，2A同步降压变换器
- HT77231 4.0V~28V输入，3.5A同步降压变换器
MOSFET
产品名称：NP4953CSR P+P -30V 5.5A+5.5A
型号： NP4953CSR
产片介绍：30V Dual P-Channel Enhancement Mode MOSFETDescription The NP4953CSR uses advanced trench technology to provide excellent RDS(ON) ，low gate charge and operation w
产品名称：NP4409SR P管 -30V -15A
型号： NP4409SR
产片介绍：40V N-Channel Enhancement Mode MOSFETDescription The NP4009SR uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequenc
产品名称：NP4407SR P管 -30V -12A
型号： NP4407SR
产片介绍：30V P-Channel Enhancement Mode MOSFETDescription The NP4407SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
产品名称：NP4419SR P管 -30V -9A
型号： NP4419SR
产片介绍：30V P-Channel Enhancement Mode MOSFETDescription The NP4419SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
产品名称：NP8205MR N+N 20V 6+6A
型号： NP8205MR
产片介绍：20V Dual N-Channel Enhancement Mode MOSFETDescription The NP8205 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and operati
产品名称：NP2301AVR P管 -20V -2.8A
型号： NP2301AVR
产片介绍：20V P-Channel Enhancement Mode MOSFETDescription General Features The NP2301AVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and
产品名称：NP2300MR-M N管 20V 6A
型号： NP2300MR-M
产片介绍：N-Channel Enhancement Mode MOSFETDescription The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high
产品名称：NP3400MR N管 30V 6.2A
型号： NP3400MR
产片介绍：N-Channel Enhancement Mode MOSFETDescription The NP3400 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and high density cel
