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N+N沟道
产品名称：NP8205MR N+N 20V 6+6A
型号： NP8205MR
产片介绍：20V Dual N-Channel Enhancement Mode MOSFETDescription The NP8205 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and operati
产片介绍：20V Dual N-Channel Enhancement Mode MOSFETDescription The NP8205 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and operati
┄┄┄详细介绍┄┄┄
20V Dual N-Channel Enhancement Mode MOSFET
Description The NP8205 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features DS R =20V,ID =6.5A DS(ON)=14.6mΩ (typical) @ VGS=4.5V RDS(ON) High power and current handing capability =18.4mΩ (typical) @ VGS=2.5V Lead free product is acquired Surface mount package
Application Battery protection Load switch Power management Package SOT23-6L
